Abstract
Lead halide perovskites (LHPs) are very promising semiconductors as optical gain media for lasing. However, the strategy to lower the lasing threshold in LHPs is still under investigation. In this work, we demonstrate that carrier recombination sink based on phase segregation induced perovskite heterostructures enables lasing behavior at room temperature. The CsPb(Br0·709I0.291)3 microplates (MPs) with regular shapes were synthesized by a chemical vapor deposition (CVD) method. After continuous UV irradiation, the mixed halide perovskite is locally degraded into separated Br-rich phase and I-rich phase due to the phase segregation. Consequently, MP with I-rich phase embedded in CsPb(Br0·709I0.291)3 matrix is obtained. The photogenerated carriers converge in the I-rich phase due to the band alignment. Therefore, localized high carrier density at low pump power is achieved. As a result, lasing behavior with threshold of about 7.5 μJ/cm2 is observed at room temperature. This work is expected to inspire the future development of low-threshold lasing based on LHPs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.