Abstract
Lead halide perovskites (LHPs) are very promising semiconductors as optical gain media for lasing. However, the strategy to lower the lasing threshold in LHPs is still under investigation. In this work, we demonstrate that carrier recombination sink based on phase segregation induced perovskite heterostructures enables lasing behavior at room temperature. The CsPb(Br0·709I0.291)3 microplates (MPs) with regular shapes were synthesized by a chemical vapor deposition (CVD) method. After continuous UV irradiation, the mixed halide perovskite is locally degraded into separated Br-rich phase and I-rich phase due to the phase segregation. Consequently, MP with I-rich phase embedded in CsPb(Br0·709I0.291)3 matrix is obtained. The photogenerated carriers converge in the I-rich phase due to the band alignment. Therefore, localized high carrier density at low pump power is achieved. As a result, lasing behavior with threshold of about 7.5 μJ/cm2 is observed at room temperature. This work is expected to inspire the future development of low-threshold lasing based on LHPs.
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