Abstract
In this work, we present room-temperature laser emission at 1.206 /spl mu/m from GaInNAs-GaAs quantum-well (QW) laser diodes (LDs) grown on misoriented GaAs (111)B substrates for the first time. Details of the structure and the molecular beam epitaxial growth of the lasers are discussed. We found that the postgrowth rapid thermal annealing increased the optimum emission, while the in situ self annealing effect in these QWs is almost negligible. The optimum annealing cycle (30 s at 850/spl deg/C) is comparable to that found for the cladding-free GaInNAs single QW samples grown on GaAs (111)B. Finally, the optical and electrical characterization of these LD devices is presented. The LDs show a room-temperature threshold current density of 2.15 kA/cm/sup 2/, with a differential quantum efficiency of 37%, under pulsed conditions.
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