Abstract

A THz/subTHz radiation detector based on MOCVD-grown modulation-doped In<sub>x</sub>Ga<sub>1-x</sub>As/InP structure is proposed. Devices have bow-tie metallic antennas to improve the couple efficiency about 5 dB and are fabricated with mesas of 3 &mu;m depth by wet etching. Detection by hot electron effects under external electromagnetic radiation is explained. Measurements performed at electromagnetic wave frequency <i>f</i>=0.0375 THz show the detector having sensitivity about 6 V/W and noise equivalent power (<i>NEP</i>) about 1.6×10<sup>-9</sup> W/Hz<sup>1/2</sup> at room temperatures.

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