Abstract
Room-temperature InAs/InAs1−xSbx strained-layer superlattice light-emitting diodes (x∼8%) are reported that emit at λ∼4.2 μm with an internal efficiency of 2.8%. The structures are grown by molecular beam epitaxy on slightly mismatched InAs substrates and include a strained AlSb barrier layer to prevent electron migration to the dislocated substrate–epilayer interface region. Comparison with a near identical structure grown without the barrier layer indicates a factor of four improvement in device efficiency at room temperature.
Published Version
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