Abstract
The authors report on the design, fabrication and operation of heterogeneous and compact "2.5 D" Photonic Crystal microlaser with a single plane of InAs quantum dots as gain medium. The high quality factor photonic structures are tailored for vertical emission. The devices consist of a top two-dimensional InP Photonic Crystal Slab, a SiO(2) bonding layer, and a bottom high index contrast Si/SiO(2) Bragg mirror deposited on a Si wafer. Despite the fact that no more than about 5% of the quantum dots distribution effectively contribute to the modal gain, room-temperature lasing operation, around 1.5 microm, was achieved by photopumping. A low effective threshold, on the order of 350 microW, and a spontaneous emission factor, over 0.13, could be deduced from experiments.
Highlights
Microlasers are among the key devices for the future on-chip optical links that could be used for optical interconnects or datacom [1]
Despite the fact that no more than about 5% of the quantum dots distribution effectively contribute to the modal gain, room-temperature lasing operation, around 1.5μm, was achieved by photopumping
Combining our original approach for the design of the micro-resonator with improved quantum dot (QD) growth conditions should result in the production of ultra-low threshold micro-lasers
Summary
Microlasers are among the key devices for the future on-chip optical links that could be used for optical interconnects or datacom [1] Such light sources should exhibit low power consumption and low footprint, and an ability to operate at high temperature (due to CMOS circuit heating) and at high modulation rate. Hendrickson et al have demonstrated low-temperature lasing operation around 1.2μm using a single InAs/GaAs QDs plane and a high Q-factor PC-micro-cavity [4]. Using a stacked InAs/GaAs quantum dot layers, room temperature (RT) lasing in photonic crystal microcavities was demonstrated around 1.3μm [6,7]. We propose to combine such a gain material with a high Q-factor “2.5D” PC resonator, and we investigate the possibility to reach RT laser operation of a single plane of InAs/InP QDs
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