Abstract
We report an experimental demonstration of room-temperature InAlAs∕InGaAs∕InP planar two-dimensional to two-dimensional resonant tunneling-coupled transistors, in which the tunneling characteristics such as negative differential resistance and peak current are controlled by a surface Schottky gate similar to the state-of-the-art high-electron-mobility transistors (HEMT) with high gain. The tunneling peak voltage was modulated linearly with the Schottky gate voltage with a ratio of nearly unity. Functionality of the device can also be switched between HEMT and tunneling transistor mode. The fabrication process is fully compatible with conventional HEMT processes, offering a fully integrable and scalable tunneling transistor technology.
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