Abstract
ABSTRACT Imprint is an important effect of the failure mechanisms in ferroelectric memory devices. After the analysis of the forming mechanism of the interface layer between the ferroelectric film and the electrode, the basic idea we employ that the imprint was induced by the different defect's distribution which existed at grain boundaries and t the interface. The difference of the defect's distribution was induced by different thickness of the interface layer. The thickness dependence of coercive voltage shift and coercive voltage change rule with time validates our assumption.
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