Room temperature hydrogenation studies on silicon

Abstract

Pd/Si devices both on n/n<SUP>+</SUP> and p/p<SUP>+</SUP> substrates have been placed in hydrogen atmosphere with the intention of introducing atomic hydrogen in silicon at room temperature. The palladium films on the top of the silicon substrates absorbs hydrogen to form PdH<SUB>x</SUB>, and the hydrogen is subsequently released into silicon, which causes the passivation effect. The shallow dopants, both in n and p silicon substrates, are passivated to the extent of 30% and 50% respectively on hydrogenation. Frequency dispersion of capacitance shows the hydrogen passivation of deep states.