Abstract
In this paper, a method for improving the non-resonance regime of the THz detection at room temperature by GaAs/AlGaAshetrostructure High Electron Mobility Transistor (HEMT) is proposed in the range of 0.1–1THz.In this method, by applying DC voltage to drain, the momentum relaxation time increases and as a result, the quality of parameter is reaching resonance regime. This leads THz HEMT detector to be able of operate in room temperature.
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