Abstract
Removal of transition metal impurities from Si is conventionally based on various gettering methods, all needing a high temperature. In this work it is demonstrated that, in the condition of intentionally introduced surface defect regions, small dose γ-ray radiation can be used to stimulate fast diffusion of Au resulting in gettering Au from bulk Si even at room temperature. This effect is named as the ‘room-temperature radiation gettering effect’. Secondary ion mass spectroscopy measurements etc strongly confirm the effect. A physical model for the effect is suggested and its application prospect is discussed.
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