Abstract

The generation, manipulation and detection of a pure spin current (i.e., the flow of spin angular momentum without a charge current) are prospective approaches for realizing next-generation spintronic devices with ultra-low electric power consumption. Conventional ferromagnetic electrodes such as Co and NiFe have been utilized as spin injectors to generate pure spin currents in nonmagnetic channels. However, the generation efficiency of pure spin currents is extremely low at room temperature, giving rise to a serious obstacle for device applications. Here we demonstrate the generation of giant pure spin currents at room temperature in lateral spin valve devices with a highly ordered Heusler-compound Co2FeSi (CFS) spin injector. The generation efficiency of pure spin currents from the CFS spin injectors is 10 times greater than that of the NiFe injectors, indicating that Heusler compound spin injectors with high spin polarization enable us to materialize a high-performance lateral spin device. The present study is a technological jump in spintronics, and indicates the great potential of ferromagnetic Heusler compounds with half metallicity for generating pure spin currents. Takashi Kimura, Kohei Hamaya and co-workers have generated large pure spin currents at room temperature, with high efficiency. Spintronic devices, which use the spin of electrons as well as their charge, promise to be faster and less power-consuming than traditional charge-based electronic ones. A pure spin current — a flow that is not accompanied by charge current — seems to be a promising way to write information for such devices. However, although ‘spin injectors’ capable of creating such currents have been developed, their efficiency has generally remained too low for practical applications. Now, Kimura, Hamaya and colleagues have significantly improved this efficiency by using a highly ordered cobalt-iron-silicon ‘Heusler’ compound with high spin polarization. These findings highlight the potential of Heusler compounds as spin injectors, and move the construction of functional spintronic devices one step forward. Heusler compound spin injector with a high spin polarization dramatically improves the generation efficiency of the pure spin current compared with a conventional ferromagnetic metal.

Highlights

  • Electrical spin injection from a ferromagnet (F) into a nonmagnet (N) can generate a spin current even in a nonmagnetic channel.[1,2,3,4,5] In general, the spin current is induced by diffusing non-equilibrium spin accumulations in the vicinity of the F/N interface under spin injection

  • MATERIALS AND METHODS Our device structure is a lateral spin valve (LSV) consisting of a CFS spin injector and detector bridged by a Cu strip (Figure 2a), in which the CFS thin film with highly ordered L21 structures has been epitaxially grown on Si(111).[23]

  • As the spin injection efficiency is inversely proportional to the size of the F/N junctions,[6] the large DRS demonstrated in the CFS/ Cu LSV with larger junctions implies a signigicant possibility for the present CFS/Cu LSV

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Summary

INTRODUCTION

Electrical spin injection from a ferromagnet (F) into a nonmagnet (N) can generate a spin current (i.e., the flow of spin angular momentum) even in a nonmagnetic channel.[1,2,3,4,5] In general, the spin current is induced by diffusing non-equilibrium spin accumulations in the vicinity of the F/N interface under spin injection. A charge current can be extracted with nonlocal electrical spin injection in a mesoscopic lateral geometry, and a spin current can be transferred without the charge current, that is, a pure spin current, in the nonmagnetic channel (Figures 1c and d). In this scheme,[1,3,4,8,9,10,11,12,13,14,15,16] the use of highly spin-polarized F spin injectors is critical for generating a giant pure spin current in the N. We show that an epitaxially grown Co-based Heusler compound, Co2FeSi (CFS) with a highly ordered L21 structure, enables the highly efficient injection of pure spin currents

MATERIALS AND METHODS
RESULTS AND DISCUSSION
SN 2 Sinj
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