Abstract
Zn1-xLixO1-yNy (ZnO:(N,Li)) thin films grown by Pulsed Laser Deposition (PLD) technique are found to exhibit intrinsic ferromagnetic behavior at room temperature (RT). XRD reveals that the grown Zn1-xLixO1-yNy thin films (x = 0.05, y = 0.08) are single phase and preferred oriented along c-axis. In contrast to pure ZnO thin films, ZnO thin films doped with non-magnetic nitrogen (ZnO:N) result in good M-H hysteresis loop at RT. Co-doping of ZnO:N with Li is found to enhance the saturation magnetization (Ms) appreciably. The room temperature ferromagnetic behavior and semiconducting property of Zn1-xLixO1-yNy thin film could be promising for spin injection based functional devices.
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