Abstract
AlN films doped with 1.2–7.9at% Mg were deposited by magnetron sputtering. Ferromagnetism is observed in the film with Tc over 380K, and it strongly depends on the Mg concentration. The observed magnetic anisotropy and exclusion of ferromagnetic contamination enforce the assumption for the origin of the intrinsic property in Mg-doped AlN films. The results confirmed that the room temperature ferromagnetism in diluted magnetic semiconductor can be realized by doping the nonmagnetic element Mg.
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