Abstract
200 keV Cu+ ions were implanted into 6H-SiC single crystal at room temperature with fluence of 8 × 1015 cm−2. No ferromagnetism (FM)-related secondary phase was found by the results of high-resolution x-ray diffraction and x-ray photoelectron spectroscopy. Positron annihilation lifetime spectroscopy results indicated that the main defect type was silicon vacancy and the concentration of it increased after Cu implantation. The room-temperature ferromagnetism was detected by superconducting quantum interference device. First-principles calculations revealed that the magnetic moments mainly come from the 2p orbitals of C atoms and 3d orbitals of Cu dopant. The origin of the FM has been discussed in detail.
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