Abstract
We report on the observation of room temperature ferromagnetism in Cr-doped In2O3 bulk samples and spin-coated thin films. The samples showed a clear ferromagnetism above 300K with magnetic moments of 0.008 and 0.22μB∕Cr at 300K for the bulk and thin film, respectively, only after high vacuum (HV) annealing at 600°C. The vacuum annealed Cr-doped In2O3 thin films showed a typical semiconducting behavior with a room temperature resistivity of 0.73Ωcm, while bulk samples were more conducting (23mΩcm). We present systematic investigations on the influence of HV annealing on the carrier concentrations, resistivity, and magnetic properties of the samples.
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