Room temperature ferromagnetism and transport properties in InN/VTe2 van der Waals heterostructures

Abstract

The room temperature ferromagnetism can be induced for nonmagnetic pristine graphene-like InN monolayer through establishing van der Waals heterostructure with ferromagnetic semiconductor, which could be applied for realizing novel low-dimensional spintronic devices. Here, we investigate the electronic structure and magnetic properties of InN/VTe2 van der Waals heterostructure under strain and electrostatic doping by first-principles calculations. The InN/VTe2 van der Waals heterostructure possesses desired physical properties such as a symmetric band alignment, ferromagnetic ground state, large in-plane magnetic anisotropy energy of 1.54 meV, and high Curie temperature of 354 K. Meanwhile, the band alignment and magnetic anisotropy energy for InN/VTe2 van der Waals heterostructure can be also tuned effectively by strain. Significant enhancement of conductivity and robust above room temperature ferromagnetism exhibit in InN/VTe2 van der Waals heterostructure under electrostatic doping and paves a new route toward a low-dimensional spintronic field-effect transistor.