Abstract
( 5 at. % ) cobalt-doped LiNbO3 (Co:LN) films were prepared by combinatorial laser molecular-beam epitaxy on Si (100). The Co:LN films with Co2+ replacing Nb exhibit room temperature ferromagnetism of 1.2μB∕Co and Curie temperature of ∼540K. Through a Ag∕Co:LN∕Si metal-ferroelectric-semiconductor field effect transistor configuration, ferroelectric measurements show that the films display hysteresis loops at 300K and ferroelectric transition temperature of ∼610K. The hysteresis and the asymmetry in capacitance-voltage and leakage-voltage curves are ascribed to trapping/detrapping process of charges at the Co:LN/Si interface. The coexistence of room temperature ferromagnetism and ferroelectricity makes Co:LN a promising single-phase multiferroic.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
