Abstract
We report the room temperature ferromagnetic properties of graphene adsorbed by cobalt oxide using electrochemical method. The cobalt oxide doping onto graphene was carried out in 0.1M LiCoO2/DI-water solution. The doped graphene thin film was determined to be a single layer from Raman analysis. The CoO doped graphene has a clear ferromagnetic hysteresis at room temperature and showed a remnant magnetization, 128.2emu/cm3. The temperature dependent conductivity of the adsorbed graphene showed the semiconducting behavior and a band gap opening of 0.12eV.
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