Abstract
We fabricated high quality BiMnO3 thin films with double SrTiO3 buffer layers on Pt/Ti/SiO2/Si substrates, in which the SrTiO3 buffer layers were used for the reduction of leakage current in BiMnO3 thin films. We chose an SrTiO3 thickness of about 5 nm, which was obtained by the fitting of ellipsometer data. We confirmed a remarkable enhancement in leakage current. BiMnO3 thin films exhibited a ferromagnetic transition with Curie temperature of about 105 K. The BiMnO3 thin film also showed a good ferroelectric property with a remnant polarization of about 9 μC/cm2.
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