Room Temperature Fabrication of MIMCAPs via Aerosol Deposition

Abstract

We report the microwave dielectric properties of BaTiO3 thin films fabricated via aerosol deposition, which is capable of applying functional ceramic films to Si-based semiconductor fabrication at room temperature. As the starting powder, BaTiO3 powder with an average particle size of 300 nm afforded a dense thin film with a thickness of 500 nm as well as a smooth interface with the Pt/Ti/SiO2/Si substrate. In comparison, the interface roughness of BaTiO3 thin film was degraded (>100 nm) when BaTiO3 powder with an average particle size of 450 nm was used as the starting powder, owing to the excessive impact energy during film growth. Metal-insulator–metal capacitors were realized on a Si wafer via electron beam evaporation and inductively coupled plasma etching in order to determine the relative permittivity, loss tangent, and current-voltage characteristics. The average values of the relative dielectric permittivity and loss tangent of the BaTiO3 thin film were 78 and 0.03, respectively, in the frequency range of 1–6 GHz.