Room-Temperature Excitonic Nanolaser Array with Directly Grown Monolayer WS2

Abstract

Two-dimensional (2D) transition-metal chalcogenides (TMDCs) with strong excitonic emission are ideal candidates for small-volume gain materials in nanolasers, which can be realized by integrating 2D TMDCs with optical microcavities. However, at present, the integration is usually realized by the transfer method, which is not suitable for large-scale production, and the quality factor of the microcavity usually drops sharply in the process of transfer. Therefore, scalable fabrication of nanolasers remains an urgent issue to be solved. In this paper, by embedding continuous monolayer WS2 between silicon nitride (Si3N4) microdisks and Al2O3, we demonstrated the room-temperature transfer-free excitonic nanolaser array. Lasing at room temperature is achieved with the help of the high-quality-factor Si3N4 microdisks and the physical vapor deposition method for growing 2D gain material directly. This work provides a practical solution for large-scale and low-cost TMDC-based nanolaser arrays in the integrated optical communication systems.