Abstract
We report on the fabrication and characterization of the room temperature electroluminescence of heterojunction between nanocrystalline diamond film (NDF) and heavily doped n-type single crystalline silicon (n +-Si) substrate. The current–voltage characteristics ( I– V) of the NDF/n +-Si heterojunction show clear rectification properties. Importantly, with sufficiently high forward bias applied on the NDF/n +-Si heterojunction, fairly strong visible electroluminescence (EL) was obtained at room temperature. The EL occurred as the consequence of the electrons tunneling from the n +-Si into the NDF. An energy-band model has been proposed to understand the mechanism of the I– V characteristics and the EL for the NDF/n +-Si heterojunction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
