Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.

Qi-Kun Huang,Huan-Huan Li,Kun Zhang,Yu-Feng Tian,Yi Yan,Shishou Kang

doi:10.1038/srep37748

Qi-Kun Huang, Huan-Huan Li + Show 4 more

Open Access

https://doi.org/10.1038/srep37748

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Abstract

Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

Highlights

Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics
It is worthwhile mentioning that the voltage intercept of the Al/Ge Schottky device measured by using commercial Keithley 2400 and Keithley 2182A is about 22 μV, which is marked by a red ★in Fig. 1b and significantly deviates from the ideal zero voltage
It should be pointed out that the voltage detected during rectification MR measurements under pure alternating current (AC) could be either positive (Fig. 2f) or negative (Figs 2c and 3d), which is determined by the device-dependent rectification direction

Summary

Introduction

Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. Electrical modulation of magnetotransport properties is usually realized through the usage of combined ferromagnetic, ferroelectric or multiferroic materials in both inorganic and organic heterostructures[19,20,21,22], where electrical control of resistance, MR and exchange bias have been demonstrated Another approach commonly used is based on spin transfer torque exerted by a spin polarized current on the spin moment of a nanometer scale magnet[23,24]. The complex role played by the interface and bulk components in the magneto-transport properties are difficult to be separated since intricate coupling between spin, charge, orbital and lattice degree of freedom usually exists In this means, effective and efficient ways toward electrical control of magnetoresistance are highly desired. Interfacial sensitive rectification MR measurements provide us a powerful tool to separate the interfaces contribution to the electrical transports from that of bulk components

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Conclusion