Abstract
We developed a highly sensitive magnetic tunnel junction (MTJ) based magnetic field sensor device with a magnetic field sensitivity of 1.29 Ω/μT. For this, more than 1000 microstructured linear MgO based MTJ pillars were fabricated and connected in series. By current biasing the MTJ sensor device under small AC external magnetic fields (μ0HAC), a large AC output voltage proportional to μ0HAC is induced. Carrying out noise spectral density measurements at such conditions, we demonstrate that our MTJ sensor device is able to detect magnetic fields down to 115 pT/Hz0.5 at frequencies fAC < 200 Hz in an unshielded environment without amplification of the MTJ AC output voltage.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
