Abstract
A new technique of diamond and InGaP room temperature bonding in atmospheric air is reported. Diamond substrate cleaned with H2SO4/H2O2 mixture solution is bonded to InGaP exposed after removing the GaAs layer by the H2SO4/H2O2/H2O mixture solution. The bonding interface is free from interfacial voids and mechanical cracks. An atomic intermixing layer with a thickness of about 8 nm is formed at the bonding interface, which is composed of C, In, Ga, P, and O atoms. After annealing at 400 °C, no exfoliation occurred along the bonding interface. An increase of about 2 nm in the thickness of the atomic intermixing layer is observed, which plays a role in alleviating the thermal stress caused by the difference of the thermal expansion coefficient between diamond and InGaP. The bonding interface demonstrates high thermal stability to device fabrication processes. This bonding method has a large potential for bonding large diameter diamond and semiconductor materials.
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