Abstract
ZnO thin films have successfully been deposited using DC magnetron sputtering at room temperature by means of plasma power variation. XRD results show that films were grown at a plasma power of 30 W and 40 W are polycrystalline, while at 20 W is considered as amorphous. The optical bandgap of films are shrinkage by increasing the plasma power. The broadest transmittance range is belongs to ZnO film growth at plasma power of 40 W. The electrical conductivity of ZnO films increase from 4.02x10-7 (Ωcm)-1 to 8.92x10-7 (Ωcm)-1 once the plasma power is increased. Based on the electrical and optical properties of the films it clearly be seen that ZnO film grown at plasma power of 40 W has highest transmittance and lower electrical resistivity therefore it appropriate for transparent conductive oxide (TCO).
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