Room temperature deposition of IWO electrodes on Spiro-OMeTAD without buffer layers for Semi-transparent perovskite solar cells

Abstract

A low-damage approach to fabricate high-quality W-doped In2O3 (IWO) films as transparent electrodes for semi-transparent perovskite solar cells was developed by the use of a reactive plasma deposition (RPD) equipment. IWO films were directly deposited on Spiro-OMeTAD by RPD at room temperature. The high O2 flux can be effectively reduce the resistance at the IWO/Spiro-OMeTAD interface, resulting in the improved solar cell performance. The maximum efficiency of the IWO-based perovskite solar cells was 16.5%, comparable to that of conventional Ag electrode solar cells. This demonstrates that the deposition of TCO-based electrodes without protective buffer layers is available by RPD.