Abstract
Transparent-conducting InZnO:Ga (IZO:Ga) thin films have been developed on glass substrate at room temperature (300K) by nonreactive RF-Magnetron sputtering using sintered ceramic disc of InZnO:Ga target (In-10 wt%, Ga -3wt% and Zn -87wt%). The novelty of very thin IZO:Ga films are low resistivity (1.5×10−3Ω.cm) and low sheet resistance (20 Ω/□) with average optical transmittance 86%, large Haze factor (>70%) and high figure of merit value (1.1×1018) respectively. RF-sputtered IZO:Ga films shows amorphous nature, smooth and crack-free surface morphology and topography with predominant metallic phase. Heat treated samples becomes crystalline, topography becomes more aligned (U-type) and surface roughness increases.
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