Abstract
Oxide semiconductors are attractive materials for thin-film electronics and optoelectronics due to compatibility with synthesis on large-area, inexpensive glass and flexible plastic substrate. However, development of thin-film electronics has been hampered by the limited number of semiconducting oxides that are p-type. Here, we report on the properties of zinc-cobalt-oxide (Zn–Co–O) films, deposited at room temperature using pulsed laser deposition, that exhibit p-type conduction. Films are deposited at room temperature in a background of oxygen using a polycrystalline ZnCo2O4 ablation target. The p-type conduction is confirmed by positive Seebeck coefficient and positive Hall coefficient. Both electrical resistivity and carrier density are dependent on oxygen background pressure used during deposition. Zn–Co–O films deposited in 50 mTorr oxygen pressure appear to be amorphous based on x-ray diffraction, and show an electrical conductivity as high as 21 S cm−1. Distinct rectifying current-voltage characteristics are observed for junctions between Zn–Co–O and n-type InGaZnO films, exhibiting a threshold voltage of ∼2.5 V. P-type Zn–Co–O appears promising for thin-film electronic device technology.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
