Abstract
ZnO homojunction light-emitting diode was grown on single-crystal GaAs (100) substrate by ultrasonic spray pyrolysis. This diode was comprised of N–In codoped p-type ZnO and unintentionally doped n-type ZnO film. Ohmic contact on n-type ZnO layer and GaAs substrate was formed by Zn∕Au and Au∕Ge∕Ni alloyed metal electrodes, respectively. An electroluminescence emission associated with defects was observed from the ZnO homojunction under forward current injection at room temperature. The I-V characteristics of the homojunction showed a threshold voltage of ∼4V under forward bias.
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