Abstract
AbstractAl doped ZnO films were prepared by reactive direct current (DC) magnetron sputtering at room temperature. The targets were metallic Al and Zn while the gases were Ar and O2. X‐ray diffraction (XRD) shows that the films are of hexagonal structure and Al is successfully doped into ZnO without secondary phases detected. Raman scattering spectra of the films contain the E1 mode of ZnO. Seebeck effect shows that the films are n‐type and four probe instrument shows that the films are very resistive. The high resistivity is due to the compensation of acceptors such as oxygen vacancies and substitutional nitrogen atoms. The acceptors reduce the electron density and increase the work function of ZnO, which therefore weakens the field emission of Al doped ZnO films.
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