Abstract
An InP based quantum cascade laser heterostructure emitting at 4.6μm was grown with gas-source molecular beam epitaxy. The wafer was processed into a conventional double-channel ridge waveguide geometry with ridge widths of 19.7 and 10.6μm without semi-insulating InP regrowth. An uncoated, narrow ridge device with a 4.8mm cavity length was epilayer down bonded to a diamond submount and exhibits 2.5W maximum output power with a wall plug efficiency of 12.5% at room temperature in continuous wave operation.
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