Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor deposition

Abstract

We report our new raised-pressure metalorganic chemical vapor deposition (RP-MOCVD) technique and the room-temperature continuous-wave (cw) operation of GaN-based laser diodes grown using this technique. We have found that both the defect density as measured by etch-pit density and optical pumping threshold-powder density decreases as the growth pressure is increased beyond 1 atm. We fabricated GaN-based laser diodes and achieved lasing under cw conditions at 20°C. The threshold current density was 3.5 kA/cm2 and the operation voltage at threshold was 16.8 V.