Abstract
We report on the first Sb-based type-I laser grown on GaAs substrate operating continuous-wave around 2.2 µm at room-temperature. The device was grown using solid-source molecular beam epitaxy and comprised two GaInAsSb quantum-wells embedded in AlGaAsSb barriers. Despite the large lattice-mismatch, a good crystalline quality was obtained, and processed devices operated continuous wave up to 50°C, with threshold current densities in the range of 1.5 to 2.2 kA/cm2. An optical output power of 3.7 mW was obtained at 20°C.
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