Abstract

We report on electrically pumped GaSb-based laser diodes monolithically grown on Si and operating in a continuous wave (cw) in the telecom wavelength range. The laser structures were grown by molecular-beam epitaxy on 6°-off (001) substrates. The devices were processed in coplanar contact geometry. 100 μm × 1 mm laser diodes exhibited a threshold current density of 1 kA/cm−2 measured under pulsed operation at 20 °C. CW operation was achieved up to 35 °C with 10 μm × 1 mm diodes. The output power at 20 °C was around 3 mW/uncoated facet, and the cw emission wavelength 1.59 μm, in the C/L-band of telecom systems.

Highlights

  • Over the past few years, global IP traffic has been exponentially growing, driven by the explosion of requests for computing, cloud storage, and telecom

  • Room temperature (RT) laser emission has been demonstrated in a continuous wave mode near 1.3 μm with GaAs-based quantum-dot lasers[5,6,7] and near 2 μm with GaSbbased quantum well (QW) lasers,[8] all grown on off-axis (001) Si substrates

  • Full deployment of Si-photonics for telecom applications requires integrated-lasers emitting near 1.55 μm, the wavelength of choice for long-haul communication systems

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Summary

Introduction

Over the past few years, global IP traffic has been exponentially growing, driven by the explosion of requests for computing, cloud storage, and telecom. Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si

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