Abstract
Backbond oxidation of the porous silicon (PS) surface as a result of irradiation by oxygen radicals (O*) from an electron cyclotron resonance plasma has been successfully achieved at room temperature. Increasing the O* irradiation time enhances both the photoluminescence (PL) intensity, and the oxygen related absorption in the 2000–2300 cm−1 wave number range obtained from Fourier-transform infrared spectroscopy (FTIR). Analysis of the FTIR spectra correlates oxidation of the outermost backbonded Si in the form H2Si–O2, HSi–O3 bonding structures with increasing PL intensity. Furthermore, these results show that oxidation of the backbonded Si network on the PS surface is the main mechanism responsible for the enhancement of the PL intensity and suppression of the PL fatigue. This enhancement and stabilization of the PL properties of PS at such low temperatures is explained in terms of the high sticking coefficient of O* and soft O* irradiation induced oxidation.
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