Room temperature atomic layer deposition of zinc titanium oxide using sequential adsorption of dimethyl zinc and tetrakis(dimethylamino)titanium

Abstract

Complex oxide films of TiO2 and ZnO are deposited by RT atomic layer deposition (ALD) with a sequential adsorption process. In this ALD, a Zn precursor of dimethyl zinc (DMZ) and a Ti precursor of tetrakis(dimethylamino)titanium (TDMAT) are used. In the sequential adsorption step, the DMZ saturation on the surface is followed by partial adsorption of TDMAT. It is assumed that the TDMAT molecule is adsorbed on the DMZ uncovered area. The mixed layer of DMZ and TDMAT is formed in the adsorption step, followed by being oxidized with the plasma-excited humidified Ar. All the ALD processes are performed at RT without any sample heating in the ALD chamber. The growth per cycle of the balanced Zn and Ti oxide deposition is recorded at 0.086 nm/cycle. The mixing ratio of Zn and Ti is controlled by the TDMAT exposure in the adsorption step. In this study, the reaction model and the related rate equations to calculate the mixing concentration ratio are proposed based on the in situ observation of the surface reaction by IR absorption spectroscopy.