Abstract
The room temperature anodic plasma oxidation of Ta silicide has been studied using ion backscattering (RBS), and nuclear reaction analysis (NRA). Thin layers of tantalum silicide were deposited on silicon substrates by cosputtering from Si and Ta targets and anodically oxidized in a multipolar plasma system. RBS spectra show that during anodization a mixed oxide of Ta 2O 5 and SiO 2 is formed. The distribution of this oxide mixture is not uniform and two layers are clearly distinguished. An outer layer forms in which the oxide mixture is richer in Ta 2O 5 than SiO 2 as compared to the starting silicide composition. The inner layer on the other hand, is richer in SiO 2. The resulting oxide has been electrically characterized by measuring the I–V curves and the dielectric constant in the frequency range 0.1–100 kHz.
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