Room- Temperature Anodic Oxidation of Silicon-on-Insulator Structures Produced by Hydrogen Transfer

Abstract

Room temperature anodic oxidation of silicon-on-insulator structures produced by hydrogen transfer was investigated as a function of the subsequent annealing temperature. It was obtained that the oxidation rate of an as-transferred Si layer is five times lower than that of bulk monocrystalline silicon. The oxidation rate increases, as the annealing temperature growth above 700°C. The activation energy of the oxidation rate growth is about 0.3 eV. The formation of hydrogen bubbles on the silicon surface was observed during oxidation. The obtained results have been interpreted in terms of the defect annealing and of the interaction of hydrogen produced during the oxidation reaction with the vacancy micropores in the transferred silicon layer.