Abstract
It is demonstrated that the emission of InAs quantum dots (QDs) capped with GaAsSb can be extended from 1.28to1.6μm by increasing the Sb composition of the capping layer from 14% to 26%. Photoluminescence excitation spectroscopy is applied to investigate the nature of this large redshift. The dominant mechanism is shown to be the formation of a type-II transition between an electron state in the InAs QDs and a hole state in the GaAsSb capping layer. The prospects for using these structures to fabricate 1.55μm injection lasers are discussed.
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