Room Temperate Bonding of Al2O3 Layers by Atomic Layer Deposition on Polyimide Substrates

Abstract

Room temperature bonding of Al2O3 layers deposited by Atomic Layer Deposition (ALD) was studied for gas diffusion barrier structures on polymer films. A modified method of the surface activated bonding (SAB) was applied for the bonding of ALD Al2O3 coated polyimide sheets. ALD deposition was performed at different process temperatures of 80, 150 and 250 ºC. The results of AFM surface profile demonstrate that samples prepared at a higher temperature in ALD process exhibit a rougher surface. Also, polymer films processed at high temperature suffer larger warpage. The size of the bonded area was optimized when the ALD synthesis of Al2O3 was performed at 80ºC, leaving only a small, unbonded area.