Abstract
The behavior of Ga adatom on GaN non-planar facets during metalorganic vapor phase epitaxy (MOVPE) is investigated on the basis of ab initio calculations. For non-planar facet consisting of and planes, we find that the Ga adatom is preferentially incorporated on planar surface region for H2 carrier gas whereas the migration of Ga adatom from non-planar facet to planar surface hardly occurs for N2 carrier gas. These results suggest that the difference in Ga adatom behavior is one of the origins for the aspect ratio difference of GaN nanostructures by carrier gas in the MOVPE.
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