Abstract
We have examined in detail the role of the Xe additive in microwave plasma-assisted {CH4+H2} chemical vapor deposition (CVD) of diamond film. Effects of Xe addition were evident in the increased growth rate (about 50% increase for 1% Xe), without degradation of the crystallinity, and in the morphological change from the cubic to platelet grain structures. Based on the results of measuring the plasma emission spectra, Raman shift, and microwave plasma impedance, the favorable effects of Xe addition were attributed to its low dissociation and excitation energies (8.28 eV for Xe radicals), which are sufficient for the formation of CH3 but not CH2 radicals. Namely, the addition of Xe caused the CVD plasma to have higher density and lower temperature. This resulted in a large amount of atomic hydrogen and CH3 (precursors for diamond crystallization) and also a smaller amount of CH2, leading to the growth of a good-quality diamond film with a high deposition rate.
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