Abstract

Semiconductors of II–VI group considered as interesting candidate for many researchers owing to its wide variety of applications in industries such as solar cells, solar selective coatings and optoelectronic devices. Chalcogenides of Cadmium received much attention due to its important structural feature, film composition, electronic and optical properties. The technique of low cost, low temperature electrochemical deposition has been employed to prepare Cadmium Selenide and Iron incorporated Cadmium Selenide thin films on transparent nature conducting substrates. The technique of X-ray diffraction has been used to identify crystalline nature and structural features of the deposited films. The method of Energy dispersive X-ray analysis has been used to find out the stoichiometric nature of the deposited films. The parameters viz., crystallite size, strain, dislocation density are estimated for the deposited films. The method of Ultraviolet-Visible spectroscopic measurements has been carried out to determine the optical properties of the deposited films. The deposited films found to exhibit band gap value in the range between 1.67 and 1.74 eV and the value of optical parameters refractive index and extinction coefficient, were estimated.

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