Abstract
The role of TiO2 thin films deposited by atomic layer deposition on p-InP photocathodes used for solar hydrogen generation was examined. It was found that, in addition to its previously reported corrosion protection role, the large valence band offset between TiO2 and InP creates an energy barrier for holes reaching the surface. Also, the conduction band of TiO2 is well-aligned with that of InP. The combination of these two effects creates an electron- selective contact with low interface recombination. Under simulated solar illumination in HClO4 aqueous electrolyte, an onset potential of >800 mV vs RHE was achieved, which is the highest yet reported for an InP photocathode.
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