Abstract
ABSTRACTBulk Sb2Se3 is prepared by melt quenching technique and from the differential scanning calorimetry, glass transition (Tg) is greater than ⅔ Tc ≈ ⅔ Tm while Tm>Tc. Sb2Se3 thin films are deposited on the glass substrates by thermal evaporation technique. Effect of thickness and annealing temperature on the structural, morphological and optical properties are studied. An amorphous to crystalline phase transition is observed from X-ray diffraction when the films are annealed at 200 °C. Structural variation, on the increase in annealing temperature causes the width of localized states to increase and hence reductions in band gaps are obtained.
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