Role of thermal stability and vapor pressure of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)magnesium(II) and its triamine adduct in producing magnesium oxide thin film using a plasma-assisted LICVD process

Abstract

Thin films of magnesia were deposited on various substrates using plasma-assisted liquid injection chemical vapor deposition with volatile Mg(tmhd) 2·2H 2O ( 1) (tmhd = 2,2,6,6-tetramethyl-3,5-heptanedione). The precursor complexes, Mg 2(tmhd) 4·( 2), and Mg(tmhd) 2·pmdien ( 3) (pmdien; N,N,N′,N″,N″-pentamethyldiethylenetriamine) were prepared from Mg(tmhd) 2·2H 2O ( 1). The temperature dependence equilibrium vapor pressure ( p e) T data yielded a straight line when log p e was plotted against reciprocal temperature in the range of 360–475 K, leading to standard enthalpy of vaporization (Δ vap H°) values of 59 ± 1 and 67 ± 2 kJ mol − 1 for ( 2) and ( 3) respectively. Thin films of magnesium oxide were grown at 773 K using complex ( 1) on various substrate materials. These films were characterized by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray for their composition and morphology.