Abstract
We investigate the effect of manipulating the initial growth mode of ZnSe on GaAs(100) on the dislocation distribution and crystal quality of the epilayers. The growth mode is manipulated, from a three-dimensional to a two-dimensional one, by controlling the impinging sequence of source beam fluxes on Ga or As stabilized GaAs(100) surfaces. Through electron microscopy, photoluminescence, and Raman spectroscopy studies we find that an increasingly two-dimensional growth mode strongly improves crystal quality, and results in drastic reduction of threading dislocation densities. Growth of a 1 μm ZnSe layer under two-dimensional initial growth conditions results in a very low (fewx10 6 cm -2) threading dislocation density at the epilayer surface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.