Abstract
The effect of an InAs monomolecular plane interspersed in bulk GaAs is investigated. To this aim, we present ab initio self-consistent pseudopotential calculations of the electronic structures of InAs GaAs (001) strained layer superlattices. Both electrons and holes are found to be strongly localized in the vicinity of the inserted InAs monolayer. The latter is thus playing the role of a single quantum well, which successfully explains the observed intense and narrow low temperature (2 K) photoluminescence spectra.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
