Abstract
With strong spin-orbit coupling, the largest spin Hall effect among transition metals, tunable interfacial Dzyaloshinskii-Moriya interaction (IDMI), robust perpendicular magnetic anisotropy (PMA), and excellent process compatibility with CMOS devices, tungsten is a key material for spintronic devices. Brillouin light-scattering spectroscopy shows that the thickness-dependent phase transformation of W in thin-film multilayers leads to phase-driven oscillations of PMA and IDMI, due mainly to the variation of distance between heavy-metal and ferromagnetic atoms. Simultaneously tuning PMA and IDMI through this effect would be a powerful tool for atomic-scale device engineering.
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